PBSS4160PANP,115 NXP Semiconductors, PBSS4160PANP,115 Datasheet - Page 2

• Manufacturer Part Number: PBSS4160PANP,115
• Description: Transistors Bipolar - BJT 60V 1A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV, - 125 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 175 MHz, 125 MHz
• Dc Collector/base Gain Hfe Min: 290, 245
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 430, 245
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
5. Pinning information
Table 2.
6. Ordering information
Table 3.
7. Marking
Table 4.
8. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PBSS4160PANP
Product data sheet
Symbol
Pin
Type number
Type number
Symbol
TR2 (PNP)
R
1
2
3
4
5
6
7
8
PBSS4160PANP
PBSS4160PANP
Per transistor; for the PNP transistor with negative polarity
V
V
CBO
CEO
CEsat
Symbol Description
E1
B1
C2
E2
B2
C1
C1
C2
Pinning information
Ordering information
Marking codes
Limiting values
Parameter
Parameter
collector-emitter
saturation resistance
collector-base voltage
collector-emitter voltage
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
collector TR1
collector TR2
Package
Name
DFN2020-6
Conditions
Description
All information provided in this document is subject to legal disclaimers.
I
t
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
C
p
≤ 300 µs; δ ≤ 0.02 ; T
= -0.5 A; I
Conditions
open emitter
open base
Simplified outline
14 January 2013
B
DFN2020-6 (SOT1118)
= -50 mA; pulsed;
Transparent top view
6
1
7
Marking code
2M
amb
5
2
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
= 25 °C
8
4
3
Graphic symbol
Min
-
PBSS4160PANP
TR1
C1
E1
Typ
Min
-
-
-
sym139
B2
B1
© NXP B.V. 2013. All rights reserved
E2
C2
TR2
Max
Version
Max
360
SOT1118
60
60
Unit
Unit
mΩ
V
V
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