PBSS4160PANP,115 NXP Semiconductors, PBSS4160PANP,115 Datasheet - Page 11

• Manufacturer Part Number: PBSS4160PANP,115
• Description: Transistors Bipolar - BJT 60V 1A NPN/PNP lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV, - 125 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 175 MHz, 125 MHz
• Dc Collector/base Gain Hfe Min: 290, 245
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 430, 245
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4160PANP
Product data sheet
Symbol
Fig. 10. TR1 (NPN): DC current gain as a function of
V
t
t
t
t
t
t
f
C
d
r
on
s
f
off
T
BEon
c
h
FE
800
600
400
200
0
10
V
(1) T
(2) T
(3) T
collector current; typical values
-1
CE
= 2 V
amb
amb
amb
Parameter
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
1
= 100 °C
= 25 °C
= −55 °C
(1)
(2)
(3)
10
10
2
10
Conditions
All information provided in this document is subject to legal disclaimers.
I
t
I
t
V
t
V
I
V
T
V
f = 1 MHz; T
C
p
C
p
p
Boff
006aad204
3
amb
CE
CC
CE
CB
I
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
≤ 300 µs; δ ≤ 0.02 ; T
C
= -1 A; I
= -1 A; I
(mA)
= 25 mA; T
= -2 V; I
= -10 V; I
= -10 V; I
= -10 V; I
= 25 °C
10
4
B
B
14 January 2013
= -50 mA; pulsed;
= -100 mA; pulsed;
amb
C
C
C
E
= -0.5 A; pulsed;
amb
= 0 A; i
= -0.5 A; I
= -50 mA; f = 100 MHz;
= 25 °C
= 25 °C
Fig. 11. TR1 (NPN): Collector current as a function of
e
amb
amb
amb
= 0 A;
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Bon
(A)
I
1.50
C
1.00
0.75
0.50
0.25
= 25 °C
= 25 °C
= 25 °C
0
= -25 mA;
T
collector-emitter voltage; typical values
0
amb
I
B
= 15 mA
= 25 °C
1
13.5
2
12
Min
-
-
-
-
-
-
-
-
-
65
-
PBSS4160PANP
10.5
3
Typ
-
-
-
15
40
55
95
40
135
125
9.5
© NXP B.V. 2013. All rights reserved
4
006aad205
V
CE
Max
-1
-1.1
-0.9
-
-
-
-
-
-
-
13
7.5
4.5
1.5
(V)
6
3
9
5
Unit
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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