J109 AMO NXP Semiconductors, J109 AMO Datasheet - Page 4

• Manufacturer Part Number: J109 AMO
• Description: JFET AMMORA J-FET
• Manufacturer: NXP Semiconductors

Specifications of J109 AMO

• Product Category: JFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Continuous Drain Current: 40 mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Factory Pack Quantity: 2000
• Part # Aliases: J109,126

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
Note
1. Test conditions for switching times are as follows:
1996 Jul 30
handbook, halfpage
C
C
Switching times; see Fig.2
t
t
t
t
j
d
on
s
off
SYMBOL
= 25 C; unless otherwise specified.
N-channel silicon junction FETs
is
rs
V
V
V
V
DD
GSoff
GSoff
GSoff
V DD
= 1.5 V; V
= 12 V; R
= 7 V; R
= 5 V; R
input capacitance
reverse transfer capacitance
delay time
turn-on time
storage time
turn-off time
Fig.2 Switching circuit.
10 nF
GS
L
L
L
= 100
= 100
= 0 to V
= 100
PARAMETER
50
10 F
50
GSoff
(J109)
(J110).
(J108)
DUT
R L
(all types)
0.1 F
SAMPLING
SCOPE
50
MGE773
V
V
T
V
note 1
amb
DS
DS
DS
= 0; V
= 0; V
= 0; V
= 25 C
4
GS
GS
GS
CONDITIONS
= 10 V; f = 1 MHz
= 0; f = 1 MHz;
= 10 V; f = 1 MHz
15
50
8
2
4
4
6
J108; J109; J110
TYP.
Product specification
30
85
15
MAX.
pF
pF
pF
ns
ns
ns
ns
UNIT