J109 AMO NXP Semiconductors, J109 AMO Datasheet - Page 3

• Manufacturer Part Number: J109 AMO
• Description: JFET AMMORA J-FET
• Manufacturer: NXP Semiconductors

Specifications of J109 AMO

• Product Category: JFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Continuous Drain Current: 40 mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Factory Pack Quantity: 2000
• Part # Aliases: J109,126

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
T
1996 Jul 30
V
V
V
I
P
T
T
R
V
V
I
I
I
R
j
G
DSS
GSS
DSX
SYMBOL
SYMBOL
SYMBOL
stg
j
DS
GSO
GDO
tot
= 25 C; unless otherwise specified.
(BR)GSS
GSoff
N-channel silicon junction FETs
th j-a
DSon
drain-source voltage
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to ambient
gate-source breakdown voltage
gate-source cut-off voltage
drain current
gate leakage current
drain-source cut-off current
drain-source on-state resistance
J108
J109
J110
J108
J109
J110
J108
J109
J110
PARAMETER
PARAMETER
PARAMETER
open drain
open source
up to T
I
I
V
V
V
V
G
D
GS
GS
GS
GS
= 1 A; V
= 1 A; V
= 0; V
= 15 V; V
= 10 V; V
= 0; V
CONDITIONS
3
amb
DS
DS
CONDITIONS
= 50 C
DS
DS
= 15 V
= 100 mV
= 5 V
DS
DS
= 0
= 0
= 5 V
80
40
10
3
2
0.5
MIN.
65
J108; J109; J110
MIN.
TYP.
VALUE
250
Product specification
50
400
150
150
3
8
12
18
25
25
25
25
10
6
4
3
MAX.
MAX.
UNIT
K/W
V
V
V
mA
mW
V
V
V
V
V
mA
mA
mA
nA
nA
C
C
UNIT
UNIT