J109,126 NXP Semiconductors, J109,126 Datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 ...

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Philips Semiconductors N-channel silicon junction FETs FEATURES High speed switching Interchangeability of drain and source connections Low R at zero gate voltage (<8 DSon APPLICATIONS Analog switches Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 ...

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Philips Semiconductors N-channel silicon junction FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GSO V gate-drain voltage GDO I forward gate current (DC total ...

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Philips Semiconductors N-channel silicon junction FETs DYNAMIC CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER C input capacitance is C reverse transfer capacitance rs Switching times; see Fig.2 t delay time d t turn-on time on t ...

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Philips Semiconductors N-channel silicon junction FETs handbook, full pagewidth off V o 1996 Jul 30 10% 90% t off 90% 10% Fig.3 Input and output waveforms. 5 ...

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Philips Semiconductors N-channel silicon junction FETs PACKAGE OUTLINE 4.2 max 1.7 1.4 1 4.8 2.54 2 max 3 Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. 1996 Jul 30 5.2 max 0.66 0.56 Fig.4 TO-92 (SOT54). 6 ...

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Philips Semiconductors N-channel silicon junction FETs DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...