PBSS4112PANP,115 NXP Semiconductors, PBSS4112PANP,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS4112PANP,115
• Description: Transistors Bipolar - BJT 120V 1A NPN/NPN lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4112PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV, - 150 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 120 MHz, 100 MHz
• Dc Collector/base Gain Hfe Min: 240, 190
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 305, 375
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
6. Thermal characteristics
Table 6.
PBSS4112PANP
Product data sheet
Fig. 1.
Symbol
Per transistor
R
R
th(j-a)
th(j-sp)
(1) 4-layer PCB 70 µm, mounting pad for collector 1 cm
(2) FR4 PCB 70 µm, mounting pad for collector 1 cm
(3) 4-layer PCB 70 µm, standard footprint
(4) 4-layer PCB 35 µm, mounting pad for collector 1 cm
(5) FR4 PCB 35 µm, mounting pad for collector 1 cm
(6) 4-layer PCB 35 µm, standard footprint
(7) FR4 PCB 70 µm, standard footprint
(8) FR4 PCB 35 µm, standard footprint
Per transistor: power derating curves
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
P
(W)
tot
1.5
1.0
0.5
0
-75
Conditions
All information provided in this document is subject to legal disclaimers.
(1)
(2)
(3) (4)
(5)
(6)
(7)
(8)
in free air
-25
29 November 2012
25
2
2
2
2
75
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
125
T
006aad165
amb
(°C)
175
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
Min
-
-
-
-
-
-
-
-
-
PBSS4112PANP
Typ
-
-
-
-
-
-
-
-
-
© NXP B.V. 2012. All rights reserved
Max
338
219
236
179
278
164
179
86
30
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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