PBSS4112PANP,115 NXP Semiconductors, PBSS4112PANP,115 Datasheet - Page 15

• Manufacturer Part Number: PBSS4112PANP,115
• Description: Transistors Bipolar - BJT 120V 1A NPN/NPN lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4112PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV, - 150 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 120 MHz, 100 MHz
• Dc Collector/base Gain Hfe Min: 240, 190
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 305, 375
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
PBSS4112PANP
Product data sheet
Fig. 24. TR2 (PNP): Collector-emitter saturation
R
CEsat
(Ω)
10
10
10
10
-1
1
-10
3
2
I
(1) T
(2) T
(3) T
resistance as a function of collector current;
typical values
C
-1
/I
B
= 20
amb
amb
amb
-1
= 100 °C
= 25 °C
= −55 °C
-10
-10
2
(1)
(2)
(3)
-10
All information provided in this document is subject to legal disclaimers.
aaa-005727
3
I
C
(mA)
-10
4
29 November 2012
Fig. 25. TR2 (PNP): Collector-emitter saturation
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
R
CEsat
(Ω)
10
10
10
10
-1
1
-10
3
2
T
(1) I
(2) I
(3) I
resistance as a function of collector current;
typical values
amb
-1
C
C
C
= 25 °C
/I
/I
/I
B
B
B
= 10
= 100
= 50
-1
-10
(1)
(3)
PBSS4112PANP
-10
2
(2)
-10
© NXP B.V. 2012. All rights reserved
aaa-005728
3
I
C
(mA)
-10
4
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