PBSS4112PANP,115 NXP Semiconductors, PBSS4112PANP,115 Datasheet - Page 21

• Manufacturer Part Number: PBSS4112PANP,115
• Description: Transistors Bipolar - BJT 120V 1A NPN/NPN lo VCEsat transistor
• Manufacturer: NXP Semiconductors

Specifications of PBSS4112PANP,115

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 120 V
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 90 mV, - 150 mV
• Maximum Dc Collector Current: 1.5 A
• Gain Bandwidth Product Ft: 120 MHz, 100 MHz
• Dc Collector/base Gain Hfe Min: 240, 190
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DFN2020-6
• Continuous Collector Current: 1 A
• Dc Current Gain Hfe Max: 305, 375
• Maximum Power Dissipation: 1450 mW
• Minimum Operating Temperature: - 55 C

NXP Semiconductors
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© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Date of release: 29 November 2012
PBSS4112PANP
Product data sheet
Product profile ....................................................... 1
Pinning information ............................................... 2
Ordering information ............................................. 2
Marking ................................................................... 2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics ....................................................... 9
Test information ................................................... 16
Package outline ................................................... 18
Soldering .............................................................. 18
Revision history ................................................... 18
Legal information .................................................19
General description .............................................. 1
Features and benefits ...........................................1
Applications .......................................................... 1
Quick reference data ............................................ 1
Quality information .........................................
Data sheet status ............................................... 19
Definitions ...........................................................19
Disclaimers .........................................................19
Trademarks ........................................................ 20
All information provided in this document is subject to legal disclaimers.
29 November 2012
120 V, 1 A NPN/PNP low VCEsat (BISS) transistor
PBSS4112PANP
© NXP B.V. 2012. All rights reserved
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