SI1913EDH-T1 Vishay/Siliconix, SI1913EDH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1913EDH-T1
• Description: MOSFET 20V 1.0A
• Manufacturer: Vishay/Siliconix

Specifications of SI1913EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Resistance Drain-source Rds (on): 0.49 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 480 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 740 mW
• Rise Time: 480 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 840 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71415
S10-1054-Rev. B, 03-May-10
V
3.0
GS
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.2
0.8
0.4
0.0
5
4
3
2
1
0
0.0
0.0
= 5 V thru 3.5 V
0
V
I
D
0.2
DS
0.5
= 0.88 A
On-Resistance vs. Drain Current
= 10 V
V
1
DS
0.4
Q
Output Characteristics
V
g
GS
- Drain-to-Source Voltage (V)
1.0
I
- Total Gate Charge (nC)
D
V
= 1.8 V
Gate Charge
GS
- Drain Current (A)
0.6
= 2.5 V
1.5
2
0.8
2.0
1.0
3
V
GS
2.5
= 4.5 V
1.2
1 V
1.5 V
2.5 V
2 V
3 V
1.4
3.0
4
160
120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
C
- 25
0.5
V
I
iss
D
GS
= 0.88 A
4
V
= 4.5 V
V
DS
GS
Transfer Characteristics
T
0
J
1.0
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
8
1.5
C
50
Vishay Siliconix
oss
25 °C
T
2.0
C
Si1913EDH
12
= - 55 °C
75
2.5
www.vishay.com
100
16
3.0
125
125 °C
150
3.5
20
3