SI1913EDH-T1 Vishay/Siliconix, SI1913EDH-T1 Datasheet

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SI1913EDH-T1

Manufacturer Part Number
SI1913EDH-T1
Description
MOSFET 20V 1.0A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1913EDH-T1

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1 A
Resistance Drain-source Rds (on)
0.49 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
480 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
740 mW
Rise Time
480 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
840 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1913EDH-T1
Manufacturer:
VISHAY
Quantity:
5 510
Part Number:
SI1913EDH-T1
Manufacturer:
SIEMENS
Quantity:
5 510
Part Number:
SI1913EDH-T1-E3
Manufacturer:
VISHAY
Quantity:
252
Part Number:
SI1913EDH-T1-E3
Manufacturer:
VISHAY
Quantity:
2 328
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71415
S10-1054-Rev. B, 03-May-10
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
G
D
Ordering Information: Si1913EDH-T1-E3 (Lead (Pb)-free)
S
1
1
2
(V)
1
2
3
SC-70 (6-LEADS)
SOT-363
Top View
0.490 at V
0.750 at V
1.1 at V
Si1913EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
J
a
DS(on)
6
5
4
= 150 °C)
a
GS
Dual P-Channel 20 V (D-S) MOSFET
GS
GS
= - 1.8 V
D
G
S
(Ω)
= - 4.5 V
= - 2.5 V
1
2
2
a
Marking Code
DA XX
a
Steady State
Steady State
t ≤ 5 s
T
T
T
T
A
A
A
A
A
Part # Code
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C, unless otherwise noted
I
- 0.81
- 0.67
- 1.0
D
(A)
Lot Traceability
and Date Code
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
I
DM
G
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
1
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• ESD Protected: 3000 V
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
• PA Switch
• Level Switch
Definition
3 k
Typical
130
170
80
- 0.72
- 0.61
- 1.0
0.74
0.38
®
5 s
Power MOSFETs: 1.8 V Rated
D
S
- 55 to 150
1
1
± 12
- 20
- 3
G
Steady State
2
Maximum
- 0.88
- 0.63
- 0.48
170
220
100
0.57
0.30
Vishay Siliconix
Si1913EDH
3 k
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
D
S
2
2
1

Related parts for SI1913EDH-T1

SI1913EDH-T1 Summary of contents

Page 1

... Top View Ordering Information: Si1913EDH-T1-E3 (Lead (Pb)-free) Si1913EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si1913EDH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge Document Number: 71415 S10-1054-Rev. B, 03-May-10 3 2.5 2.5 V 2.0 1 1.0 1 160 120 4 2.0 2.5 3.0 1.6 1.4 1.2 1.0 0.8 0.6 1.0 1.2 1.4 Si1913EDH Vishay Siliconix ° °C 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si1913EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.30 0.25 0.20 0.15 0.10 0. 0.05 - 0. Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C J 0.8 1.0 1 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71415. Document Number: 71415 S10-1054-Rev. B, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1913EDH Vishay Siliconix - www.vishay.com ...

Page 6

- - Document Number: 71154 06-Jul-01 Package Information Dim Min Nom Max A 0.90 – A – – 0.80 ...

Page 7

... BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the SC-70 6-pin basic pad layout and dimensions. This pad pattern is sufficient for the low-power applications for which this package is intended ...

Page 8

AN816 Vishay Siliconix Front of Board SC70 SC70−6 DUAL THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the “foot” is the ...

Page 9

Alloy 42 200 100 Time (Secs) FIGURE 4. Dual SC70-6 Thermal Performance on EVB Document Number: 71405 12-Dec-03 500 400 300 200 Copper 100 0 ...

Page 10

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 11

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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