SI1913EDH-T1 Vishay/Siliconix, SI1913EDH-T1 Datasheet - Page 10

• Manufacturer Part Number: SI1913EDH-T1
• Description: MOSFET 20V 1.0A
• Manufacturer: Vishay/Siliconix

Specifications of SI1913EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Resistance Drain-source Rds (on): 0.49 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 480 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 740 mW
• Rise Time: 480 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 840 ns

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72602
18
Revision: 21-Jan-08