SI6467BDQ-T1 Vishay/Siliconix, SI6467BDQ-T1 Datasheet - Page 6
![no-image](/images/no-image-200.jpg)
SI6467BDQ-T1
Manufacturer Part Number
SI6467BDQ-T1
Description
MOSFET 12V 8.0A 1.05W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI6467BDQ-T1.pdf
(11 pages)
Specifications of SI6467BDQ-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6.8 A
Resistance Drain-source Rds (on)
12.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Fall Time
85 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.05 W
Rise Time
85 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
220 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 830
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI6467BDQ-T1-GE3
Manufacturer:
TI
Quantity:
126
JEDEC Part Number: MO-153
Document Number: 71201
06-Jul-01
Corners)
R 0.10
B
D
e
(4 Corners)
R 0.10
C
E
L1
L
oK1
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5844
Package Information
Dim
oK1
A
A
E
L
A
B
C
D
E
Y
e
L
1
1
2
1
Min
0.05
0.80
0.19
2.90
6.20
4.30
0.45
0.90
0_
–
–
–
–
Vishay Siliconix
Nom
0.127
0.10
1.00
0.28
3.00
6.40
4.40
0.65
0.60
1.00
3_
–
–
www.vishay.com
Max
1.20
0.15
1.05
0.30
3.10
6.60
4.50
0.75
1.10
0.10
6_
–
–
1