SI6467BDQ-T1 Vishay/Siliconix, SI6467BDQ-T1 Datasheet - Page 10
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SI6467BDQ-T1
Manufacturer Part Number
SI6467BDQ-T1
Description
MOSFET 12V 8.0A 1.05W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI6467BDQ-T1.pdf
(11 pages)
Specifications of SI6467BDQ-T1
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
6.8 A
Resistance Drain-source Rds (on)
12.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSSOP-8
Fall Time
85 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.05 W
Rise Time
85 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
220 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 830
Part Number:
SI6467BDQ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI6467BDQ-T1-GE3
Manufacturer:
TI
Quantity:
126
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSSOP-8
0.092
(2.337)
0.026
(0.660)
0.014
0.012
(0.356)
(0.305)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
Document Number: 72611
www.vishay.com
Revision: 21-Jan-08
27