BR93L66RF-WE2 Rohm Semiconductor, BR93L66RF-WE2 Datasheet - Page 12

• Manufacturer Part Number: BR93L66RF-WE2
• Description: IC EEPROM 4KBIT 2MHZ 8SOP
• Manufacturer: Rohm Semiconductor

Specifications of BR93L66RF-WE2

• Memory Size: 4K (256 x 16)
• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOP
• Clock Frequency: 2MHz
• Supply Voltage Range: 1.8V To 5.5V
• Memory Case Style: SOP
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Svhc: No SVHC (18-Jun-2010)
• Package /: RoHS Compliant
• Memory Configuration: 256 X 16
• Interface Type: Serial, Microwire
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5) READY / BUSY status display (DO terminal) (common to BR93L46-W, BR93L56-W, BR93L66-W, BR93L76-W, BR93L86-W)
This display outputs the internal status signal. When CS is started after tCS (Min. 200ns)
from CS fall after write command input, "H" or "L" is output.
* Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted. Therefore,
DO
CS
SK
Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
DI
status READY output is cancelled, and malfunction and mistake write may be made.
R/B display = "L" (BUSY) = write under execution
(D0 status)
R/B display = "H" (READY) = command wait status
(D0 status)
High-Z
Microcontroller
Microcontroller
WRITE
INSTRUCTION
Fig. 53 DO pull down resistance
CLOCK
"L" input
"H" input
VILM
Fig. 52 DO pull up resistance
VIHM
After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.
And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted.
Even after tE/W (Max. 5ms) from write of the memory cell, the following command is accepted.
Therefore, CS = "H" in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, DI = "L" in
the area CS = "H". (Especially, in the case of shared input port, attention is required.)
Fig. 54 R/B status output timing chart
Rpd
Rpu
t
IOHE
IOLE
SV
BUSY
STATUS
VOLE
VOHE
"H" output
"L" output
EEPROM
EEPROM
READY
12/16
Example) When Vcc = 5V, VOLE = 0.4V, IOLE = 2.1mA, VILM = 0.8V,
With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V
or below, and with VILM (= 0.8V), the equation
Example) When Vcc = 5V, VOHE = Vcc - 0.2V, IOHE = 0.1mA, VIHM =
With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V
or below, and with VIHM (= 3.5V), the equation
VOHE : EEPROM VOH specifications
IOHE : EEPROM IOH specifications
VIHM : Microcontroller VIH specifications
VOLE : EEPROM VOL specifications
IOLE : EEPROM IOL specifications
VILM : Microcontroller VIL specifications
from the equation
Vcc × 0.7V from the equation
VOHE ≥
VOLE ≤
Rpd ≥
Rpd ≥
Rpd ≥
Rpu ≥
Rpu ≥
Rpu ≥
0.1×10
48 (K )
V
2.1×10
VOHE
2.2 (K )
IOHE
5-0.2
VIHM
CC
5-0.4
IOLE
VILM
-VOLE
,
-3
-3
. . .
. . .
. . .
. . .
,
is also satisfied.
is also satisfied.