BUK7675-100A /T3 NXP Semiconductors, BUK7675-100A /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK7675-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7675-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23 A
• Resistance Drain-source Rds (on): 0.075 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 99 W
• Rise Time: 39 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 26 ns
• Part # Aliases: BUK7675-100A,118

NXP Semiconductors
BUK7675-100A_2
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
D
(V)
35
30
25
20
15
10
5
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
2
0
T
j
= 175 °C
60
4
max
min
typ
T
j
= 25 °C
120
6
V
T
GS
j
(°C)
03nb29
03aa32
(V)
180
8
Rev. 02 — 31 July 2009
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
(V)
DSon
GS
120
100
80
60
40
10
9
8
7
6
5
4
3
2
1
0
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
V
GS
(V)= 5.5
10
V
DS
10
= 14 V
20
BUK7675-100A
6
30
6.5
20
7
V
DS
8
Q
© NXP B.V. 2009. All rights reserved.
40
G
= 80 V
10
(nC)
I
D
03nb27
03nb32
(A)
30
50
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