BUK7675-100A /T3 NXP Semiconductors, BUK7675-100A /T3 Datasheet - Page 2
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BUK7675-100A /T3
Manufacturer Part Number
BUK7675-100A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7675-100A_T3.pdf
(13 pages)
Specifications of BUK7675-100A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Resistance Drain-source Rds (on)
0.075 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
24 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
99 W
Rise Time
39 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
26 ns
Part # Aliases
BUK7675-100A,118
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK7675-100A_2
Product data sheet
Pin
1
2
3
mb
Type number
BUK7675-100A
Symbol
G
D
S
D
Pinning information
Ordering information
Package
Name
D2PAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Rev. 02 — 31 July 2009
Simplified outline
(D2PAK)
SOT404
1
N-channel TrenchMOS standard level FET
mb
2
3
BUK7675-100A
Graphic symbol
G
mbb076
© NXP B.V. 2009. All rights reserved.
D
Version
SOT404
S
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