BUK7675-100A /T3 NXP Semiconductors, BUK7675-100A /T3 Datasheet - Page 5
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BUK7675-100A /T3
Manufacturer Part Number
BUK7675-100A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7675-100A_T3.pdf
(13 pages)
Specifications of BUK7675-100A /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Resistance Drain-source Rds (on)
0.075 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
24 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
99 W
Rise Time
39 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
26 ns
Part # Aliases
BUK7675-100A,118
NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7675-100A_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
10
Conditions
see
−5
Figure 4
10
−4
Rev. 02 — 31 July 2009
10
−3
10
−2
N-channel TrenchMOS standard level FET
P
10
t
p
−1
T
BUK7675-100A
Min
-
-
t
p
δ =
(s)
03nb35
t
T
p
t
1
Typ
-
50
© NXP B.V. 2009. All rights reserved.
Max
1.5
-
Unit
K/W
K/W
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