BUK7880-55 /T3 NXP Semiconductors, BUK7880-55 /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK7880-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7880-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Configuration: Single Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 15 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1800 mW
• Rise Time: 15 ns
• Factory Pack Quantity: 4000
• Typical Turn-off Delay Time: 18 ns
• Part # Aliases: BUK7880-55,135

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7880-55
Product data sheet
Pin
1
2
3
4
Type number
BUK7880-55
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
Electrostatic discharge
V
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
esd
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
electrostatic discharge voltage
gate
drain
source
mounting base;
connected to drain
Package
Name
SOT223
Description
plastic surface-mounted package with increased heatsink;
4 leads
All information provided in this document is subject to legal disclaimers.
Conditions
T
R
T
T
T
T
T
T
T
pulsed; T
I
V
HBM; C = 100 pF; R = 1.5 kΩ
D
j
amb
sp
amb
sp
sp
sp
sp
Rev. 3 — 21 April 2011
GS
GS
Simplified outline
≥ 25 °C; T
= 2.5 A; V
= 25 °C
= 25 °C; pulsed
= 25 °C; T
= 25 °C
= 25 °C
= 10 V; T
= 20 kΩ
= 25 °C
= 100 °C
SOT223 (SOT223)
sp
= 25 °C
sup
j
≤ 150 °C
1
j(init)
amb
≤ 25 V; R
= 25 °C
= 25 °C; unclamped
2
4
3
N-channel TrenchMOS standard level FET
GS
= 50 Ω;
Graphic symbol
BUK7880-55
G
Min
-
-
-16
-
-
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2011. All rights reserved.
sym116
D
S
40
150
150
Version
SOT223
Max
55
55
16
3.5
7.5
2.2
1.8
8.3
7.5
40
30
2
Unit
V
V
V
A
A
A
A
W
W
°C
°C
A
A
mJ
kV
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