BSN20 /T3 NXP Semiconductors, BSN20 /T3 Datasheet - Page 8

• Manufacturer Part Number: BSN20 /T3
• Description: MOSFET TRENCH 31V-99V G2 TAPE 13
• Manufacturer: NXP Semiconductors

Specifications of BSN20 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB-3
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 830 mW
• Factory Pack Quantity: 10000
• Part # Aliases: BSN20,235

BSN20
Philips Semiconductors
N-channel enhancement mode field-effect transistor
03aa55
I S
(A)
T
= 25 C and 150 C; V
= 0 V
j
GS
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
9397 750 07213
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 03 — 26 June 2000
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