BSN20 /T3 NXP Semiconductors, BSN20 /T3 Datasheet - Page 13

• Manufacturer Part Number: BSN20 /T3
• Description: MOSFET TRENCH 31V-99V G2 TAPE 13
• Manufacturer: NXP Semiconductors

Specifications of BSN20 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB-3
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 830 mW
• Factory Pack Quantity: 10000
• Part # Aliases: BSN20,235

Philips Semiconductors
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© Philips Electronics N.V. 2000.
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
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The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 26 June 2000
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Transient thermal impedance . . . . . . . . . . . . . . 4
Document order number: 9397 750 07213
Printed in The Netherlands
N-channel enhancement mode field-effect transistor
BSN20