BSN20 /T3 NXP Semiconductors, BSN20 /T3 Datasheet - Page 3

• Manufacturer Part Number: BSN20 /T3
• Description: MOSFET TRENCH 31V-99V G2 TAPE 13
• Manufacturer: NXP Semiconductors

Specifications of BSN20 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB-3
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 830 mW
• Factory Pack Quantity: 10000
• Part # Aliases: BSN20,235

Philips Semiconductors
9397 750 07213
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
P
(%)
=
der
----------------------
P
tot 25 C
120
100
P
80
60
40
20
tot
0
DM
0
is single pulse.
25
100%
10 -2
10 -1
(A)
I D
50
1
1
P
T sp = 25 o C
75
t p
100
T
125
=
T sp ( o C)
t p
T
t
150
03aa17
175
R DSon = V DS / I D
Rev. 03 — 26 June 2000
N-channel enhancement mode field-effect transistor
10
Fig 2. Normalized continuous drain current as a
D.C.
V
I
der
GS
function of solder point temperature.
=
I
der
5 V
------------------ -
I
120
100
(%)
D 25 C
80
60
40
20
0
I
D
0
25
100%
V DS (V)
50
t p = 10 s
100 s
1 ms
10 ms
100 ms
75
T sp ( o C)
03aa49
10 2
© Philips Electronics N.V. 2000. All rights reserved.
100
125
150
BSN20
03aa25
175
3 of 13