PSMN030-150B /T3 NXP Semiconductors, PSMN030-150B /T3 Datasheet - Page 7

• Manufacturer Part Number: PSMN030-150B /T3
• Description: MOSFET TAPE13 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN030-150B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55.5 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 76 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 W
• Rise Time: 71 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 97 ns
• Part # Aliases: PSMN030-150B,118

NXP Semiconductors
PSMN030-150B
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate-source voltage as a function of gate
(A)
l
D
V
(V)
10
10
10
10
10
10
GS
16
12
−1
−2
−3
−4
−5
−6
8
4
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
= 25 °C; V
= 25 °C; I
minimum
1
V
40
DD
D
= 30 V
DS
= 55.5 A
= V
2
GS
80
typical
3
V
DD
= 120 V
120
maximum
All information provided in this document is subject to legal disclaimers.
4
Q
003aaf149
V
003aaf152
G
GS
(nC)
(V)
Rev. 02 — 13 December 2010
160
5
N-channel TrenchMOS SiliconMAX standard level FET
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source (diode forward) current as a function of
(pF)
(A)
I
C
F
10
10
10
50
40
30
20
10
0
4
3
2
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−1
GS
GS
= 0 V; f = 1 MHz
= 0 V
0.4
T
1
j
= 175 °C
PSMN030-150B
0.8
10
C
C
C
T
oss
V
iss
rss
V
© NXP B.V. 2010. All rights reserved.
j
SDS
DS
= 25 °C
003aaf151
003aaf154
(V)
(V)
10
1.2
2
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