BUK7608-55A /T3 NXP Semiconductors, BUK7608-55A /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK7608-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7608-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 126 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 80 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 254 W
• Rise Time: 94 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 100 ns
• Part # Aliases: BUK7608-55A,118

NXP Semiconductors
BUK7608-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
20
V
DD
= 14 (V)
40
(A)
I
S
100
80
60
40
20
V
0
60
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 44 (V)
G
(nC)
03nh41
0.2
80
Rev. 03 — 14 June 2010
0.4
T
j
0.6
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
0.8
7000
6000
5000
4000
3000
2000
1000
0
T
10
as a function of drain-source voltage; typical
values
j
= 25 °C
−2
1.0
N-channel TrenchMOS standard level FET
V
SD
03nh40
(V)
1.2
10
−1
C
C
C
rss
iss
oss
BUK7608-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nh47
(V)
10
2
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