SI3433BDV-T1 Vishay/Siliconix, SI3433BDV-T1 Datasheet - Page 9

• Manufacturer Part Number: SI3433BDV-T1
• Description: MOSFET 20V 5.6A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI3433BDV-T1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 0.042 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 45 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 80 ns

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TSOP-6
0.099
(2.510)
0.039
0.020
0.019
(1.001)
(0.508)
(0.493)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72610
26
Revision: 21-Jan-08