SI3433BDV-T1 Vishay/Siliconix, SI3433BDV-T1 Datasheet - Page 8

• Manufacturer Part Number: SI3433BDV-T1
• Description: MOSFET 20V 5.6A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI3433BDV-T1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 0.042 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 45 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 80 ns

AN823
Vishay Siliconix
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case
junction-to-foot thermal resistance, Rq
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted.
of the TSOP-6.
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET r
www.vishay.com
2
Equivalent Steady State Performance—TSOP-6
DS(on)
Thermal Resistance Rq
with temperature (Figure 4).
thermal
3_C/s (max)
Table 1 shows the thermal performance
140 − 170_C
TABLE 1.
resistance,
jf
FIGURE 3. Solder Reflow Temperature and Time Durations
jf
. This parameter is
Maximum peak temperature at 240_C is allowed.
Rq
jc
,
30_C/W
Pre-Heating Zone
60-120 s (min)
or
the
1X4_C/s (max)
255 − 260_C
1.6
1.4
1.2
1.0
0.8
0.6
−50
On-Resistance vs. Junction Temperature
V
I
−25
D
Reflow Zone
GS
60 s (max)
= 6.1 A
10 s (max)
217_C
= 4.5 V
T
FIGURE 4. Si3434DV
0
J
− Junction Temperature (_C)
25
50
3-6_C/s (max)
75
Document Number: 71743
100
125
150
27-Feb-04