SI3433BDV-T1 Vishay/Siliconix, SI3433BDV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3433BDV-T1
• Description: MOSFET 20V 5.6A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI3433BDV-T1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.3 A
• Resistance Drain-source Rds (on): 0.042 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP-6
• Fall Time: 45 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 45 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 80 ns

Si3433BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
I
D
50
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10
1
0.1
-2
* V
125
GS
Limited by R
Single Pulse
T
> minimum V
Square Wave Pulse Duration (s)
A
150
V
= 25 °C
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
DS(on)
-1
BVDSS Limited
GS
*
at which R
DS(on)
10
I
20
16
12
DM
1
8
4
0
10 -
Limited
is specified
2
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 s
10 µs
100 µs
10 -
100
1
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
Time (s)
1
- T
S09-0766-Rev. D, 04-May-09
t
A
1
T
= P
A
Document Number: 72027
t
2
= 25 °C
DM
10
Z
thJA
thJA
100
t
t
1
2
(t)
= 360 C/W
100
6
0
0
600