SI1406DH-T1 Vishay/Siliconix, SI1406DH-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1406DH-T1
• Description: MOSFET 20V 3.9A 1.0W
• Manufacturer: Vishay/Siliconix

Specifications of SI1406DH-T1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.1 A
• Resistance Drain-source Rds (on): 0.065 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 47 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Rise Time: 47 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 54 ns

Si1406DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70684.
www.vishay.com
4
- 0.1
- 0.2
- 0.4
- 0.3
0.2
0.1
0.0
- 50
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
- 25
0.05
0.02
4
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
Single Pulse
T
0
J
- Junction Temperature (°C)
Threshold Voltage
Single Pulse
25
10 -
I
D
3
= 250 µA
50
10 -
Normalized Thermal Transient Impedance, Junction-to-Ambient
3
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10 -
2
125
150
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10 -
2
10 -
1
30
25
20
15
10
10 -
0.001
5
0
1
1
0.01
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0.1
P
DM
JM
-
Time (s)
T
t
1
A
1
S10-0935-Rev. C, 19-Apr-10
= P
1
t
2
Document Number: 70684
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 100 °C/W
100
600
10
600