SI1406DH-T1 Vishay/Siliconix, SI1406DH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1406DH-T1
• Description: MOSFET 20V 3.9A 1.0W
• Manufacturer: Vishay/Siliconix

Specifications of SI1406DH-T1

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.1 A
• Resistance Drain-source Rds (on): 0.065 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 47 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Rise Time: 47 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 54 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70684
S10-0935-Rev. C, 19-Apr-10
0.20
0.16
0.12
0.08
0.04
0.00
0.1
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.9 A
0.2
On-Resistance vs. Drain Current
= 10 V
1
2
V
V
T
SD
GS
Q
J
g
= 150 °C
- Source-to-Drain Voltage (V)
= 1.8 V
0.4
- Total Gate Charge (nC)
I
2
D
Gate Charge
- Drain Current (A)
4
0.6
3
T
6
J
= 25 °C
0.8
4
V
V
GS
GS
= 2.5 V
= 4.5 V
8
1.0
5
1.2
10
6
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
C
D
V
I
- 25
D
rss
GS
= 2 A
= 3.9 A
= 4.5 V
1
4
V
V
GS
T
DS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
I
Capacitance
D
2
8
= 3.9 A
C
50
oss
Vishay Siliconix
12
3
75
Si1406DH
C
iss
100
www.vishay.com
16
4
125
150
20
5
3