SIA413DJ-T1-E3 Vishay/Siliconix, SIA413DJ-T1-E3 Datasheet - Page 8

• Manufacturer Part Number: SIA413DJ-T1-E3
• Description: MOSFET 12V 12A 19W
• Manufacturer: Vishay/Siliconix

Specifications of SIA413DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 29 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 40 ns, 12 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 65 ns, 70 ns
• Part # Aliases: SIA413DJ-E3

RECOMMENDED PAD LAYOUT FOR PowerPAK
Document Number: 70486
Revision: 21-Jan-08
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2.200 (0.087)
0.350 (0.014)
0.300 (0.012)
1.500
(0.059)
1
0.950 (0.037)
0.650 (0.026)
®
Dimensions in mm/(Inches)
SC70-6L Single
0.650 (0.026)
0.550 (0.022)
0.235 (0.009)
0.300 (0.012)
0.475 (0.019)
Application Note 826
0.350 (0.014)
0.870 (0.034)
0.355 (0.014)
0.275 (0.011)
Vishay Siliconix
www.vishay.com
11