SIA413DJ-T1-E3 Vishay/Siliconix, SIA413DJ-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SIA413DJ-T1-E3
• Description: MOSFET 12V 12A 19W
• Manufacturer: Vishay/Siliconix

Specifications of SIA413DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 29 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 40 ns, 12 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 65 ns, 70 ns
• Part # Aliases: SIA413DJ-E3

SiA413DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.02
0.2
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
www.vishay.com/ppg?70447.
Single Pulse
0.02
Single Pulse
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
For more information please contact:
10
-2
This document is subject to change without notice.
10
-3
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
[e-mail]
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
DM
100
S12-1141-Rev. D, 21-May-12
Z
thJA
thJA
Document Number: 70447
t
t
1
2
www.vishay.com/doc?91000
(t)
= 65 C/W
1000
10
-1