SIA413DJ-T1-E3 Vishay/Siliconix, SIA413DJ-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SIA413DJ-T1-E3
• Description: MOSFET 12V 12A 19W
• Manufacturer: Vishay/Siliconix

Specifications of SIA413DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 29 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 40 ns, 12 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 65 ns, 70 ns
• Part # Aliases: SIA413DJ-E3

SiA413DJ
Vishay Siliconix
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted)
a
For more information please contact:
V
Symbol
V
R
V
GS(th)
I
t
t
t
t
I
I
C
V
D(on)
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
This document is subject to change without notice.
I
GSS
DSS
Q
DS
g
Q
R
I
SM
t
t
t
oss
t
t
t
t
DS
SD
iss
rss
S
rr
fs
gs
gd
a
b
r
f
r
f
rr
g
g
/T
/T
J
J
I
V
F
V
I
V
V
DS
D
I
= - 8 A, di/dt = 100 A/µs, T
DS
DS
D
DS
 - 8 A, V
 - 8 A, V
= - 6 V, V
= - 12 V, V
= - 6 V, V
V
V
V
V
V
= - 10 V, V
V
V
V
V
V
V
V
DS
GS
GS
GS
DS
DS
DD
DD
GS
DS
GS
I
DS
S
Test Conditions
- 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 10 V, I
= - 8 A, V
= - 6 V, R
= - 6 V, R
= 0 V, I
= - 12 V, V
= - 1.5 V, I
= 0 V, V
I
D
GEN
T
f = 1 MHz
GS
GEN
GS
C
= - 250 µA
GS
GS
= 25 °C
GS
, I
= - 4.5 V, I
[e-mail]
= - 4.5 V, R
D
= - 8 V, I
D
= - 8 V, R
= 0 V, T
GS
GS
= 0 V, f = 1 MHz
= - 250 µA
GS
= - 250 µA
D
L
L
D
D
D
GS
D
= 0.75 
= 0.75 
= - 6.7 A
= - 4.5 V
= - 6.7 A
= - 6.2 A
= - 2.3 A
= ± 8 V
= - 1 A
= 0 V
= 0 V
D
J
D
g
= - 10 A
= 55 °C
J
g
= - 10 A
= 1 
= 25 °C
= 1 
Min.
- 0.4
- 12
- 20
0.024
0.028
0.036
0.050
1800
Typ.
- 0.8
S12-1141-Rev. D, 21-May-12
- 11
450
390
2.7
6.5
30
38
23
20
40
65
40
10
12
70
40
40
20
14
26
3
7
Document Number: 70447
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± 100
0.029
0.034
0.044
0.100
Max.
- 1.2
- 10
- 12
100
105
- 1
- 1
57
35
30
60
60
15
20
60
40
60
30
mV/°C
Unit
nA
µA
pF
nC
nC
ns
ns
ns


V
V
A
S
A
V