BSH201 T/R NXP Semiconductors, BSH201 T/R Datasheet - Page 6
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BSH201 T/R
Manufacturer Part Number
BSH201 T/R
Description
MOSFET TAPE7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BSH201_TR.pdf
(7 pages)
Specifications of BSH201 T/R
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.3 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Fall Time
4.5 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
417 mW
Rise Time
4.5 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
45 ns
Part # Aliases
BSH201,215
Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1998
P-channel enhancement mode
MOS transistor
discharge during transport or handling.
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
Fig.15. SOT23 surface mounting package.
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
6
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
X
v
ISSUE DATE
M
97-02-28
A
SOT23
Product specification
BSH201
Rev 1.000