BSH201,215 NXP Semiconductors, BSH201,215 Datasheet

MOSFET P-CH 60V 300MA SOT-23

BSH201,215

Manufacturer Part Number
BSH201,215
Description
MOSFET P-CH 60V 300MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BSH201215.pdf (7 pages)

Specifications of BSH201,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
417mW
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
3nC @ 10V
Vgs(th) (max) @ Id
1.9V @ 1mA
Current - Continuous Drain (id) @ 25° C
300mA
Drain To Source Voltage (vdss)
60V
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.5 Ohm @ 160mA, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
2.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.3 A
Power Dissipation
417 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934054717215::BSH201 T/R::BSH201 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSH201,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
FEATURES
• Low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount
package
GENERAL DESCRIPTION
P-channel, enhancement mode,
logic
transistor. This device has low
threshold voltage and extremely
fast switching making it ideal for
battery powered applications and
high speed digital interfacing.
The BSH201 is supplied in the
SOT23
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
August 1998
P-channel enhancement mode
MOS transistor
SYMBOL
V
V
V
I
I
P
T
SYMBOL
R
D
DM
stg
DS
DGR
GS
tot
th j-a
, T
j
level,
subminiature
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
PARAMETER
Thermal resistance junction to
ambient
field-effect
surface
power
PINNING
SYMBOL
PIN
1
2
3
gate
source
drain
g
CONDITIONS
R
T
T
T
T
T
CONDITIONS
FR4 board, minimum
footprint
a
a
a
a
a
GS
DESCRIPTION
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 100 ˚C
= 20 k
1
d
s
QUICK REFERENCE DATA
SOT23
R
DS(ON)
TYP.
MIN.
- 55
300
-
-
-
-
-
-
-
-
V
I
2.5
D
DS
Product specification
1
= -0.3 A
= -60 V
MAX.
0.417
MAX.
-0.19
0.17
-0.3
-1.2
150
-60
-60
20
-
3
(V
GS
Top view
2
BSH201
= -10 V)
Rev 1.000
UNIT
UNIT
K/W
W
W
˚C
V
V
V
A
A
A

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BSH201,215 Summary of contents

Page 1

Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage ...

Page 2

Philips Semiconductors P-channel enhancement mode MOS transistor ELECTRICAL CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER V Drain-source breakdown (BR)DSS voltage V Gate threshold voltage GS(TO) R Drain-source on-state DS(ON) resistance g Forward transconductance fs I Gate source ...

Page 3

Philips Semiconductors P-channel enhancement mode MOS transistor Normalised Power Dissipation, PD (%) 120 100 Ambient Temperature, Ta (C) Fig.1. Normalised power dissipation. PD% = 100 ˚C ...

Page 4

Philips Semiconductors P-channel enhancement mode MOS transistor Drain Current, ID (A) -1 -0.9 VDS > RDS(on) -0 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0 -0.5 -1 -1.5 -2 -2.5 -3 Gate-Source Voltage, ...

Page 5

Philips Semiconductors P-channel enhancement mode MOS transistor Gate-source voltage, VGS (V) -14 VDD = Ohms - Gate charge, (nC) Fig.13. Typical ...

Page 6

Philips Semiconductors P-channel enhancement mode MOS transistor MECHANICAL DATA Plastic surface mounted package; 3 leads 1 DIMENSIONS (mm are the original dimensions UNIT A max. 1.1 mm 0.1 0.9 OUTLINE VERSION SOT23 Notes 1. This product is supplied ...

Page 7

Philips Semiconductors P-channel enhancement mode MOS transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification ...

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