BSH201 T/R NXP Semiconductors, BSH201 T/R Datasheet - Page 5
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BSH201 T/R
Manufacturer Part Number
BSH201 T/R
Description
MOSFET TAPE7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BSH201_TR.pdf
(7 pages)
Specifications of BSH201 T/R
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.3 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Fall Time
4.5 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
417 mW
Rise Time
4.5 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
45 ns
Part # Aliases
BSH201,215
Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-14
-12
-10
-8
-6
-4
-2
0
0
Gate-source voltage, VGS (V)
VDD = 10 V
RD = 20 Ohms
Tj = 25 C
1
Gate charge, (nC)
V
2
GS
= f(Q
3
G
)
4
BSH201
5
5
3.5
2.5
1.5
0.5
I
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
1
GS
150 C
= 0 V; parameter T
Tj = 25 C
Product specification
1.5
BSH201
BSH201
Rev 1.000
2
j