BUK7624-55 /T3 NXP Semiconductors, BUK7624-55 /T3 Datasheet - Page 5

• Manufacturer Part Number: BUK7624-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7624-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 45 A
• Resistance Drain-source Rds (on): 0.024 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 18 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 103 W
• Rise Time: 19 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 25 ns
• Part # Aliases: BUK7624-55,118

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
VGS/V
V
GS
2.5
1.5
Fig.12. Typical capacitances, C
I
C = f(V
12
10
3
2
1
5
0
0.01
D
8
6
4
2
0
0
= f(Q
0
= f(V
Fig.11. Sub-threshold drain current.
G
GS)
DS
); conditions: I
5
); conditions: V
; conditions: T
1
0.1
10
transistor
2%
2
15
QG/nC
D
1
= 50 A; parameter V
j
VDS = 14V
GS
= 25 ˚C; V
typ
20
VDS/V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
3
iss
25
10
, C
98%
DS
VDS = 44V
oss
4
= V
30
, C
GS
rss
100
.
DS
35
5
5
VGS
0
IF/A
I
100
Fig.15. Normalised avalanche energy rating.
F
80
60
40
20
120
110
100
0
= f(V
90
80
70
60
50
40
30
20
10
0
0
Fig.14. Typical reverse diode current.
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
SDS
DSS
DSS
40
); conditions: V
% = f(T
RGS
0.5 LI
Tj/C =
60
0.5
mb
80
); conditions: I
D
175
2
VSDS/V
BV
Tmb / C
100
GS
DSS
L
= 0 V; parameter T
VDS
120
BV
T.U.T.
Product specification
DSS
1
25
BUK7624-55
140
D
shunt
= 75 A
R 01
V
DD
160
-
+
Rev 1.000
-ID/100
180
VDD
1.5
j