BUK7624-55 /T3 NXP Semiconductors, BUK7624-55 /T3 Datasheet - Page 3

• Manufacturer Part Number: BUK7624-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7624-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 45 A
• Resistance Drain-source Rds (on): 0.024 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 18 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 103 W
• Rise Time: 19 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 25 ns
• Part # Aliases: BUK7624-55,118

Philips Semiconductors
AVALANCHE LIMITING VALUE
April 1998
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
5 V
= 40 A; V
= 10 V; R
3
DD
GS
25 V;
= 50 ; T
1000
RDS(ON) = VDS / ID
100
10
I
1
D
0.001
0.01
1
0.1
ID / A
& I
Fig.3. Safe operating area. T
10
1
Fig.4. Transient thermal impedance.
DM
Transient thermal impedance, Zth (K/W)
0.05
0.02
mb
Z
= f(V
0.5
0.2
0.1
th j-mb
0
= 25 ˚C
DS
10us
= f(t); parameter D = t
DC
); I
10
DM
pulse width, tp (s)
MIN.
single pulse; parameter t
VDS / V
-
1ms
TYP.
P
D
-
Product specification
100
tp = 10 us
100 us
1 ms
10 ms
100 ms
BUK7624-55
mb
0.1s
t
p
T
MAX.
= 25 ˚C
p
/T
80
D =
7524-55
T
Rev 1.000
t
p
t
10s
UNIT
1000
mJ
p