BUK7624-55 /T3 NXP Semiconductors, BUK7624-55 /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK7624-55 /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7624-55 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 45 A
• Resistance Drain-source Rds (on): 0.024 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 18 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 103 W
• Rise Time: 19 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 25 ns
• Part # Aliases: BUK7624-55,118

Philips Semiconductors
April 1998
TrenchMOS
Standard level FET
ID/A
Fig.5. Typical output characteristics, T
I
100
ID/A
D
Fig.6. Typical on-state resistance, T
80
60
40
20
40
35
30
25
20
15
100
0
= f(V
80
60
40
20
0
0
0
RDS(ON)/mOhm
0
Fig.7. Typical transfer characteristics.
16
12
GS
10
) ; conditions: V
VGS/V =
R
I
DS(ON)
2
2
D
= f(V
20
Tj/C =
10
= f(I
6
transistor
DS
4
30
175
); parameter V
4
D
); parameter V
VSD/V
ID/A
40
25
VGS/V
DS
6.5
6
= 25 V; parameter T
50
6
7
VGS/V =
8
60
GS
GS
8
j
8
j
10
= 25 ˚C .
70
= 25 ˚C .
9
10
80
9
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
12
10
j
4
Fig.9. Normalised drain-source on-state resistance.
gfs/S
a = R
V
25
20
15
10
Fig.8. Typical transconductance, T
2.5
1.5
0.5
-100
5
0
5
4
3
2
1
0
GS(TO)
-100
2
1
0
VGS(TO) / V
a
DS(ON)
max.
min.
typ.
g
Fig.10. Gate threshold voltage.
= f(T
fs
-50
-50
/R
= f(I
20
DS(ON)25 ˚C
j
); conditions: I
BUK959-60
D
); conditions: V
0
0
Tmb / degC
40
Tj / C
= f(T
50
50
ID/A
Rds(on) normlised to 25degC
j
); I
D
= 1 mA; V
D
60
100
100
= 25 A; V
DS
Product specification
= 25 V
BUK7624-55
150
BUK759-60
150
j
80
= 25 ˚C .
DS
GS
= V
Rev 1.000
= 5 V
200
200
GS
100