AT25DF161-MH-T Atmel, AT25DF161-MH-T Datasheet - Page 41

• Manufacturer Part Number: AT25DF161-MH-T
• Description: IC FLASH 16MBIT 100MHZ 8UDFN
• Manufacturer: Atmel

Specifications of AT25DF161-MH-T

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 16M (2M x 8)
• Speed: 100MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-UDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3687E–DFLASH–11/10
14.
Figure 13-1. Atmel RapidS Operation
System Considerations
In an effort to continue our goal of maintaining world-class quality leadership, Atmel
testing on the Atmel AT25DF161 that would not normally be done with a Serial Flash device. The testing that has been
performed on the AT25DF161 involved extensive, non-stop reading of the memory array on pre-conditioned devices. The
pre-conditioning of the devices, which entailed erasing and programming the entire memory array 10,000 times, was
done to simulate a customer environment and to exercise the memory cells to a certain degree.
The non-stop reading of the devices was done in three levels of granularity, with the first level involving a continuous,
looped read of 256-bytes (a single page) of memory, the second level involving a continuous, looped-read of a 4-Kbyte
(16 pages) portion of memory, and the third level entailing non-stop reading of the entire memory array. Read operations
were performed at both +25°C and +125°C and with a supply voltage of 3.7V, which exceeds the specified datasheet
operating voltage range.
The results of all of the extensive tests indicate that the contents of a portion of memory being read continuously could be
altered after 800,000,000 read operations only if that portion of the memory was not erased or reprogrammed at all
during the 800,000,000 read operations. If that portion of memory was reprogrammed at some point, then it would take
another 800,000,000 read operations after reprogramming before the contents could potentially be altered. For example,
if the Serial Flash is being used for boot code storage, then it would take 800,000,000 boot operations before that boot
code may become altered, provided that the boot code was not updated or reprogrammed. If an application was to read
the entire memory array non-stop at a clock frequency of 10MHz, it would take over 5 years to reach 800,000,000 read
operations.
Atmel firmly believes that this extended testing result should not be a cause for concern. We also believe that most, if not
all, applications will never read the same portion of memory 800,000,000 times throughout the life of the application
without ever updating that portion of memory.
Slave CS
MOSI = Master Out, Slave In
The Master is the ASIC/MCU and the Slave is the memory device.
The Master always clocks data out on the rising edge of SCK and always clocks data in on the falling edge of SCK.
The Slave always clocks data out on the falling edge of SCK and always clocks data in on the rising edge of SCK.
A.
B.
C. Master clocks out second bit of BYTE A on the same rising edge of SCK
D. Last bit of BYTE A is clocked out from the Master
E.
F.
G. Master clocks in first bit of BYTE B
H. Slave clocks out second bit of BYTE B
I.
MOSI
MISO
SCK
Master clocks out first bit of BYTE A on the rising edge of SCK
Slave clocks in first bit of BYTE A on the next rising edge of SCK
Last bit of BYTE A is clocked into the slave
Slave clocks out first bit of BYTE B
Master clocks in last bit of BYTE B
A
1
B
MSB
MISO = Master In, Slave Out
2
C
3
4
BYTE A
t
V
5
6
7
D
8
E
LSB
F
1
G
MSB
2
H
3
®
has been performing extensive
4
BYTE B
5
Atmel AT25DF161
6
7
8
I
LSB
1
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