BUK9609-75A /T3 NXP Semiconductors, BUK9609-75A /T3 Datasheet - Page 3

• Manufacturer Part Number: BUK9609-75A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-75A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 226 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 185 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 424 ns
• Part # Aliases: BUK9609-75A,118

NXP Semiconductors
BUK9609-75A
Product data sheet
Fig 1.
Fig 3.
(A)
I
(%)
I
D
der
10
10
10
120
80
40
10
-1
3
2
1
0
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
50
Limit R
DSon
100
= V
DS
1
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
mb
03aa24
(°C)
200
Rev. 4 — 30 August 2011
10
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS logic level FET
50
10
2
t
100 μ s
10 ms
100 ms
p
1 ms
=10 μ s
BUK9609-75A
100
V
DS
150
(V)
© NXP B.V. 2011. All rights reserved.
T
mb
03nb44
03na19
(°C)
10
200
3
3 of 13