BUK9609-75A /T3 NXP Semiconductors, BUK9609-75A /T3 Datasheet - Page 12

• Manufacturer Part Number: BUK9609-75A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-75A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 226 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 185 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 424 ns
• Part # Aliases: BUK9609-75A,118

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BUK9609-75A
Product data sheet
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Rev. 4 — 30 August 2011
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9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
Trademarks
N-channel TrenchMOS logic level FET
BUK9609-75A
© NXP B.V. 2011. All rights reserved.
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