AT45DB021D-SH-T Atmel, AT45DB021D-SH-T Datasheet - Page 27

• Manufacturer Part Number: AT45DB021D-SH-T
• Description: IC FLASH 2MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT45DB021D-SH-T

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 2M (1024 pages x 264 bytes)
• Speed: 66MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Cell Type: NOR
• Density: 2Mb
• Access Time (max): 6ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC EIAJ
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256K
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
14.2
3638I–DFLASH–04/09
Based on JEDEC publication 106 (JEP106), Manufacturer ID data can be comprised of any number of bytes. Some manufacturers may have
Manufacturer ID codes that are two, three or even four bytes long with the first byte(s) in the sequence being 7FH. A system should detect code
7FH as a “Continuation Code” and continue to read Manufacturer ID bytes. The first non-7FH byte would signify the last byte of Manufacturer ID
data. For Atmel (and some other manufacturers), the Manufacturer ID data is comprised of only one byte.
Operation Mode Summary
The commands described previously can be grouped into four different categories to better
describe which commands can be executed at what times.
Group A commands consist of:
Group B commands consist of:
Group C commands consist of:
Group D commands consist of:
If a Group A command is in progress (not fully completed), then another command in Group A,
B, C, or D should not be started. However, during the internally self-timed portion of Group B
commands 1 through 4, any command in Group C can be executed. During the internally self-
timed portion of Group B commands 5 through 10, only Group C commands 3 and 4 can be exe-
1. Main Memory Page Read
2. Continuous Array Read
3. Read Sector Protection Register
4. Read Sector Lockdown Register
5. Read Security Register
1. Page Erase
2. Block Erase
3. Sector Erase
4. Chip Erase
5. Main Memory Page to Buffer Transfer
6. Main Memory Page to Buffer Compare
7. Buffer to Main Memory Page Program with Built-in Erase
8. Buffer to Main Memory Page Program without Built-in Erase
9. Main Memory Page Program through Buffer
10. Auto Page Rewrite
1. Buffer Read
2. Buffer Write
3. Status Register Read
4. Manufacturer and Device ID Read
1. Erase Sector Protection Register
2. Program Sector Protection Register
3. Sector Lockdown
4. Program Security Register
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