BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 3
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BSS84AKMB,315
Manufacturer Part Number
BSS84AKMB,315
Description
MOSFET P-Chan -50V -230mA
Manufacturer
NXP Semiconductors
Datasheet
1.BSS84AKMB315.pdf
(15 pages)
Specifications of BSS84AKMB,315
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 230 mA
Resistance Drain-source Rds (on)
7.5 Ohms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
SOT-883B
Power Dissipation
715 mW
Factory Pack Quantity
10000
NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BSS84AKMB
Product data sheet
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
ESD maximum rating
V
D
DM
S
Fig 2.
j
amb
stg
DS
GS
tot
ESD
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Measured between all pins.
P
(%)
der
120
80
40
0
-75
function of junction temperature
Normalized total power dissipation as a
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
-25
25
75
125
All information provided in this document is subject to legal disclaimers.
001aao121
T
j
(°C)
175
Conditions
T
V
V
T
T
T
T
HBM
j
amb
amb
sp
amb
GS
GS
Rev. 1 — 6 June 2012
= 25 °C
= 25 °C
= -10 V; T
= -10 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Fig 3.
amb
amb
(%)
I
der
= 25 °C
= 100 °C
120
80
40
0
-75
function of junction temperature
Normalized continuous drain current as a
50 V, single P-channel Trench MOSFET
p
≤ 10 µs
-25
25
[1]
[1]
[2]
[1]
[1]
[3]
BSS84AKMB
75
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
-
-
© NXP B.V. 2012. All rights reserved.
125
001aao122
T
j
2
150
150
150
Max
-50
20
-230
-150
-0.9
360
715
2700
-230
1000
(°C)
.
175
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
mA
V
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