BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 2
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BSS84AKMB,315
Manufacturer Part Number
BSS84AKMB,315
Description
MOSFET P-Chan -50V -230mA
Manufacturer
NXP Semiconductors
Datasheet
1.BSS84AKMB315.pdf
(15 pages)
Specifications of BSS84AKMB,315
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 230 mA
Resistance Drain-source Rds (on)
7.5 Ohms
Configuration
Single
Mounting Style
SMD/SMT
Package / Case
SOT-883B
Power Dissipation
715 mW
Factory Pack Quantity
10000
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
BSS84AKMB
Product data sheet
Pin
1
2
3
Type number
BSS84AKMB
Type number
BSS84AKMB
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
Symbol Description
G
S
D
Pinning information
Ordering information
Marking codes
gate
source
drain
PIN 1 INDICATION
READING EXAMPLE:
Package
Name
DFN1006B-3
0111
1011
Description
Leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.37 mm
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 June 2012
Simplified outline
SOT883B (DFN1006B-3)
1
2
READING DIRECTION
READING DIRECTION
Transparent
Marking code
0000 0010
top view
3
50 V, single P-channel Trench MOSFET
Graphic symbol
MARKING CODE
(EXAMPLE)
BSS84AKMB
006aac673
G
© NXP B.V. 2012. All rights reserved.
017aaa259
D
S
Version
SOT883B
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