BSS84AKMB,315 NXP Semiconductors, BSS84AKMB,315 Datasheet - Page 10

• Manufacturer Part Number: BSS84AKMB,315
• Description: MOSFET P-Chan -50V -230mA
• Manufacturer: NXP Semiconductors

Specifications of BSS84AKMB,315

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 230 mA
• Resistance Drain-source Rds (on): 7.5 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-883B
• Power Dissipation: 715 mW
• Factory Pack Quantity: 10000

NXP Semiconductors
8. Test information
9. Package outline
BSS84AKMB
Product data sheet
Fig 18. Duty cycle definition
Fig 19. Package outline SOT883B (DFN1006B-3)
1.05
0.95
Dimensions in mm
0.65
All information provided in this document is subject to legal disclaimers.
P
1
0.65
0.55
0.35
0.55
0.47
3
Rev. 1 — 6 June 2012
2
t
1
0.20
0.12
0.30
0.22
0.30
0.22
t
2
duty cycle δ =
006aaa812
0.40
0.34
t
t
t
1
2
50 V, single P-channel Trench MOSFET
0.04 max
11-11-02
BSS84AKMB
© NXP B.V. 2012. All rights reserved.
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