PSMN7R0-30MLC,115 NXP Semiconductors, PSMN7R0-30MLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN7R0-30MLC,115
• Description: MOSFET N-channel MOSFET logic level LFPAK33
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-30MLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.15 V
• Continuous Drain Current: 67 A
• Resistance Drain-source Rds (on): 9 mOhms
• Mounting Style: SMD/SMT
• Package / Case: LFPAK33
• Power Dissipation: 57 W
• Factory Pack Quantity: 1500

NXP Semiconductors
PSMN7R0-30MLC
Product data sheet
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DSon
100
(S)
g
75
50
25
fs
25
20
15
10
0
5
drain current; typical values
of drain current; typical values
Forward transconductance as a function of
10
0
3
20
30
N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology
40
50
60
V
GS
All information provided in this document is subject to legal disclaimers.
003aaj543
003aaj539
I
I
(V) = 10
D
D
3.5
(A)
(A)
4.5
80
70
Rev. 4 — 15 June 2012
Fig 9.
Fig 11. Normalized drain-source on-state resistance
a
(A)
I
1.5
0.5
D
80
60
40
20
0
2
1
0
-60
function of gate-source voltage; typical values
factor as a function of junction temperature
Transfer characteristics; drain current as a
0
PSMN7R0-30MLC
1
0
T
j
= 150 ° C
60
2
4.5V
120
3
V
© NXP B.V. 2012. All rights reserved.
T
GS
j
V
T
003aaj540
= 25 ° C
003a a g131
=10V
GS
j
(C)
(V)
180
4
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