PSMN9R5-100BS,118 NXP Semiconductors, PSMN9R5-100BS,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN9R5-100BS,118
• Description: MOSFET N-CH 100 V 9.6 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 90 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 89 A
• Resistance Drain-source Rds (on): 9.6 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN9R5-100BS
Product data sheet
Table 6.
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(S)
g
DSon
150
100
fs
50
30
24
18
12
0
6
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
4
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
8
…continued
12
40
16
60
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
DS
V
003aae021
I
003aae025
= 15 A; V
= 20 A; dI
D
GS
(A)
Figure 17
= 50 V
(V)
20
80
Rev. 2 — 2 March 2012
GS
S
/dt = 100 A/µs; V
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
(pF)
(A)
I
8000
C
6000
4000
2000
D
100
75
50
25
0
0
GS
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
= 0 V;
0.5
3
PSMN9R5-100BS
10
5.5
Min
-
-
-
6
1
Typ
0.85
61.5
157
1.5
9
V
© NXP B.V. 2012. All rights reserved.
GS
V
003aae019
V
003aae022
GS
(V) = 4
DS
Max
1.2
-
-
(V)
C
C
5
(V)
4.8
4.5
4.3
4.7
rss
iss
12
2
ns
Unit
V
nC
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