PSMN9R5-100BS,118 NXP Semiconductors, PSMN9R5-100BS,118 Datasheet - Page 10

• Manufacturer Part Number: PSMN9R5-100BS,118
• Description: MOSFET N-CH 100 V 9.6 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 90 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 89 A
• Resistance Drain-source Rds (on): 9.6 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
7. Package outline
Fig 18. Package outline SOT404 (D2PAK)
PSMN9R5-100BS
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
10.30
9.70
Rev. 2 — 2 March 2012
E
3
0
b
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
Q
base
L p
PSMN9R5-100BS
A 1
Q
PROJECTION
c
EUROPEAN
A
© NXP B.V. 2012. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
10 of 14