SIHG22N50D-GE3 Vishay/Siliconix, SIHG22N50D-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIHG22N50D-GE3
• Description: MOSFET 500V 230mOhm@10V 22A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHG22N50D-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 22 A
• Resistance Drain-source Rds (on): 230 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 40 ns
• Forward Transconductance Gfs (max / Min): 8 S
• Gate Charge Qg: 49 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 312 W
• Rise Time: 42 ns
• Typical Turn-off Delay Time: 47 ns

S12-1459-Rev. A, 18-Jun-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1000
1000
100
100
0.1
0.1
10
10
1
1
0.2
1
* V
Fig. 8 - Maximum Safe Operating Area
Operation in this Area
Limited by R
T
T
T
Single Pulse
GS
C
J
J
0.01
= 150 °C
= 150 °C
0.1
= 25 °C
0.4
> minimum V
www.vishay.com
1
Limited by R
0.0001
V
V
SD
DS
I
DM
, Source-Drain Voltage (V)
0.05
, Drain-to-Source Voltage (V)
0.2
0.6
0.1
DS(on)
= Limited
Duty Cycle = 0.5
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
0.02
GS
DS(on)
0.8
at which R
T
Single Pulse
J
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
= 25 °C
1
BVDSS Limited
V
100
DS(on)
GS
1.2
= 0 V
0.001
For technical questions, contact:
is specified
1.4
1 ms
10 ms
100 μs
1000
1.6
Pulse Time (s)
4
0.01
[e-mail]
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10 - Temperature vs. Drain-to-Source Voltage
625
600
575
550
525
500
475
25
20
15
10
5
0
- 60
25
www.vishay.com/doc?91000
- 40 - 20
T
50
J
0.1
T
, Junction Temperature (°C)
J
0
, Case Temperature (°C)
20 40 60 80 100 120 140
75
100
SiHG22N50D
Vishay Siliconix
Document Number: 91516
125
1
150
160