SIHG22N50D-GE3 Vishay/Siliconix, SIHG22N50D-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIHG22N50D-GE3
• Description: MOSFET 500V 230mOhm@10V 22A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHG22N50D-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 22 A
• Resistance Drain-source Rds (on): 230 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Fall Time: 40 ns
• Forward Transconductance Gfs (max / Min): 8 S
• Gate Charge Qg: 49 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 312 W
• Rise Time: 42 ns
• Typical Turn-off Delay Time: 47 ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-1459-Rev. A, 18-Jun-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 3 - Typical Transfer Characteristics
TOP 15 V
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
T
J
= 150 °C
V
14 V
13 V
12 V
11 V
10 V
15 V
14 V
13 V
12 V
11 V
10 V
V
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9 V
8 V
7 V
6 V
5 V
DS
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V
9 V
8 V
7 V
6 V
5V
GS
DS
5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T
10
T
10
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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= 25 °C
= 150 °C
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= 25 °C
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For technical questions, contact:
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
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Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 4 - Normalized On-Resistance vs. Temperature
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= 11 A
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, Drain-to-Source Voltage (V)
, Junction Temperature (°C)
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, Total Gate Charge (nC)
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iss
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= C
= C
= 400 V
= 250 V
= 100 V
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gs
gd
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ds
+ C
= 10 V
+ C
SiHG22N50D
Vishay Siliconix
Document Number: 91516
gd
gd
, C
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ds
Shorted
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