SIHG22N50D-GE3 Vishay/Siliconix, SIHG22N50D-GE3 Datasheet

SIHG22N50D-GE3

Manufacturer Part Number

SIHG22N50D-GE3

Description

MOSFET 500V 230mOhm@10V 22A N-Ch D-SRS

Manufacturer

Vishay/Siliconix

Datasheet

1.SIHG22N50D-GE3.pdf (8 pages)

Specifications of SIHG22N50D-GE3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

500 V

Continuous Drain Current

22 A

Resistance Drain-source Rds (on)

230 mOhms at 10 V

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-247AC

Fall Time

40 ns

Forward Transconductance Gfs (max / Min)

8 S

Gate Charge Qg

49 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

312 W

Rise Time

42 ns

Typical Turn-off Delay Time

47 ns

Current page: 1 of 8
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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

c. 1.6 mm from case.

d. I

S12-1459-Rev. A, 18-Jun-12

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

Continuous Drain Current (T

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt

Soldering Recommendations (Peak Temperature)

DS(on)

max. (nC)

(nC)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

(V) at T

(nC)

TO-247AC

 I

= 50 V, starting T

max. at 25 °C ()

, dI/dt = 100 A/μs, starting T

max.

www.vishay.com

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

= 25 °C, L = 2.3 mH, R

= 150 °C)

= 10 V

= 25 °C.

N-Channel MOSFET

D Series Power MOSFET

Single

For technical questions, contact:

550

= 25 , I

= 25 °C, unless otherwise noted)

0.230

at 10 V

= 11 A.

for 10 s

= 125 °C

TO-247AC

SiHG22N50D-E3

SiHG22N50D-GE3

= 100 °C

= 25 °C

FEATURES

• Optimal Design

• Optimal Efficiency and Operation

• Material categorization: For definitions please see

APPLICATIONS

• Consumer Electronics

• Server and Telecom Power Supplies

• Industrial

• Battery Chargers

www.vishay.com/doc?99912

- Low Area Specific On-Resistance

- Low Input Capacitance (C

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (U

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-Of-Merit (FOM): R

- Fast Switching

- Displays (LCD or Plasma TV

- SMPS

- Welding, Induction Heating, Motor Drives

hvm@vishay.com

SYMBOL

www.vishay.com/doc?91000

dV/dt

, T

stg

- 55 to + 150

iss

LIMIT

300

± 30

0.38

500

139

312

2.5

)

SiHG22N50D

Vishay Siliconix

Document Number: 91516

x Q

UNIT

W/°C

V/ns

°C

Related parts for SIHG22N50D-GE3

SIHG22N50D-GE3 Summary of contents

Page 1

... Material categorization: For definitions please see www.vishay.com/doc?99912 APPLICATIONS • Consumer Electronics - Displays (LCD or Plasma TV • Server and Telecom Power Supplies S - SMPS • Industrial - Welding, Induction Heating, Motor Drives • Battery Chargers TO-247AC SiHG22N50D-E3 SiHG22N50D-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 100 °C C ...

Page 2

... dI/dt = 100 A/μ RRM while V is rising from oss DS while V is rising from oss DS 2 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG22N50D Vishay Siliconix MAX. UNIT 40 °C/W 0.4 MIN. TYP. MAX. 500 - - = 250 μ ± ...

Page 3

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG22N50D Vishay Siliconix 100 120 140 160 T , Junction Temperature (° iss MHz ...

Page 4

... Fig Temperature vs. Drain-to-Source Voltage 0.001 0.01 Pulse Time (s) 4 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG22N50D Vishay Siliconix 50 75 100 125 150 T , Case Temperature (° 100 120 140 160 T , Junction Temperature (° ...

Page 5

... ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig Basic Gate Charge Waveform For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG22N50D Vishay Siliconix Charge Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. ...

Page 6

... Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 For technical questions, contact: hvm@vishay.com www.vishay.com/doc?91000 SiHG22N50D Vishay Siliconix + + Document Number: 91516 ...

Page 7

TO-247AC (High Voltage E MILLIMETERS DIM. MIN. ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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